DXTB772 discrete semiconductors r dc components co., ltd. technical specifications of pnp epitaxial planar transistor pinning 1 = base 2 = collector 3 = emitter description designed for use in output stage amplifier, voltage regulator, dc-dc converter and driver. (1)single pulse pw=1ms(2)when tested in free air condition, without heat sinking. (3)when mounted on a 40x40x1mm ceramic board. (4)printed circuit board 2mm thick, collector plating 1cm square or larger. (5)pulse test: pulse width 380ms, duty cycle 2%. sot-89 dimensions in inches and (millimeters) .063(1.60).055(1.40) .066(1.70).059(1.50) .167(4.25).159(4.05) .016(0.41).014(0.35) .120(3.04) .117(2.96) .181(4.60).173(4.40) .060(1.52).058(1.48) .020(0.51).014(0.36) .102(2.60).095(2.40) 1 2 3 characteristic symbol rating unit collector-base voltage vcbo -40 v collector-emitter voltage vceo -30 v emitter-base voltage vebo -5 v collector current (continuous) ic -3 a collector current (pulse)(1) ic -7 a total power dissipation (2) pd 1 w total power dissipation (3) pd 2 w total power dissipation (4) pd 1.5 w junction temperature tj +150 oc storage temperature tstg -55 to +150 oc absolute maximum ratings(ta=25oc) characteristic symbol min typ max unit test conditions collector-base breakdown volatge bvcbo -40 - - v ic=-100ma collector-emitter breakdown voltage bvceo -30 - - v ic=-1ma emitter-base breakdown volatge bvebo -5 - - v ie=-10ma collector cutoff current icbo - - -1 ma vcb =-30v emitter cutoff current iebo - - -1 ma veb =-3v collector-emitter saturation voltage (5) vce(sat) - -0.3 -0.5 v ic=-2a, ib=-0.2a base-emitter saturation voltage (5) vbe(sat) - -1 -2 v ic=-2a, ib=-0.2a dc current gain(5) hfe1 30 - - - ic=-20ma, vce=-2v hfe2 100 160 500 - ic=-1a, vce=-2v transition frequency ft - 80 - mhz ic=-100ma, vce =-5v, f=100mhz output capacitance cob - 55 - pf vcb =-10v, f=1mhz electrical characteristics(ratings at 25 oc ambient temperature unless otherwise specified) rank q p e range 100~200 160~320 250~500 classification of hfe2
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